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The changes of performence of AlGaAs/GaAs heteroface solar cell after 1 -MeV electron irradiation has been studied by the experimental and numerical fitting. Using an improved damped least square method, the spectral response and dark J-V characteristic of the cells are fitted according to the various theoretical formulas. From the fitting calculation, a number of materials, structural and electric parameters of the cell are obtained. The experimental data and calculated results show that the critical irradiation flux of the cell is about 2.2×1014 cm-2, the damge constant KL for the minority carrier diffusion length in n-GaAs layer due to irradiation is found to be larger than that in p-GaAs, layer, they are about 7.0×10-3 and 2.2×10-7, respectively, the degradation of the minority carrier diffusion length in p-GaAs layer and the increase in the recombination velocity at interfaec are the majar reasons for the cell performence degradation. The cell with a shallow junction has higher irradiation resistance than the one with a deep junction. Based on the studies, the method for improving the irradiation resistance of the cell is discussed.
The changes of performence of AlGaAs / GaAs heteroface solar cell after 1 -MeV electron irradiation has been studied by the experimental and numerical fitting. Using an improved damped least square method, the spectral response and dark JV characteristic of the cells are fitted according to the various theoretical formulas. From the fitting calculation, a number of materials, structural and electric parameters of the cell are obtained. The experimental data and calculated results show that the critical irradiation flux of the cell is about 2.2 × 1014 cm-2, the damge constant KL for the minority carrier diffusion length in n-GaAs layer due to irradiation is found to be larger than that in p-GaAs, layer, they are about 7.0 × 10 -3 and 2.2 × 10 -7, respectively, the degradation of the minority carrier diffusion length in p-GaAs layer and the increase in the recombination velocity at interfaec are the majar reasons for the cell performence degradation. The cell with a shallow junction has higher Based on the studies, the method for improving the irradiation resistance of the cell is discussed.