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某些CMOS集成电路需要把5V逻辑信号转换成12V或15V电平的信号,图1给出一种简单方法。晶体管Q_1是一个工作在共栅极状态的n沟道结型场效应管。大于1V或2V的源极电压使结型场效应管的沟道被夹断,并让电阻R_1把漏极电压拉到V_s。接近0V的源极电压使沟道导通,从而使漏极电压也接近0V。电阻R_1决定了电路的转换速度和电源的功耗。R_1阻值从100KΩ变到1MΩ,汲取的电流大约从150μA变到15μA,实际的脉冲速率限制在1MHz左右。这种线路耗电比基于双极型晶体管的电路少,而且线路省掉一个元件(基极电阻)。
Some CMOS ICs need to convert 5V logic signals into 12V or 15V signals. Figure 1 shows a simple method. Transistor Q_1 is an n-channel junction field-effect transistor operating in a common-gate state. A source voltage greater than 1V or 2V pinch the channel of the junction FET and allow resistor R_1 to pull the drain voltage to V_s. The source voltage close to 0V turns on the channel, so that the drain voltage also approaches 0V. Resistor R_1 determines the switching speed of the circuit and the power consumption of the power supply. The R_1 resistance changes from 100KΩ to 1MΩ, the current draw changes from 150μA to 15μA, and the actual pulse rate is limited to around 1MHz. This circuit consumes less power than the bipolar transistor-based circuit, and eliminates one element (base resistance).