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研究了三种成分的急冷高硅(Si>4.0％)薄带在高温回火过程中晶粒长大的机理,分析讨论了薄带组织结构的变化及其对磁性能的影响。结果表明,晶粒异常长大的择优取向依赖于热处理温度及气氛。在5×10~(-6)×133.322Pa的真空下,经1 h退火,异常长大发生在950℃在氢气中,异常长大发生在1000℃以上。热处理改善了合金的织构及磁性。对应于最佳织构(100)[ovw],薄带具有最佳磁性能(低矫顽力Hc及低铁损P)。对于含硅量不同的三种材料,取得最佳织构的热处理温度范围也不同。5×10~(-6)×133.322 Pa,1 h退火,4.5％Si-Fe明显具有(100)[ovw]织构的温度范围是1050℃左右;5.5％Si-Fe是1000～1050℃;6.5％Si-Fe是950～1050℃。在氢气中,6.5％Si-Fe在1000℃以上处理,才有可能得到(100)[ovw]织构。以上结果可用表面能解释:不同晶面的表面能不同,其表面能又受到表面氧化层的成分及厚度的影响。
The mechanism of grain growth of three kinds of quenched high silicon (Si> 4.0%) ribbons during high temperature tempering was studied. The change of the microstructure and the influence on the magnetic properties were discussed. The results show that the preferred orientation of grain growth depends on the heat treatment temperature and atmosphere. After annealing at 1 × h under vacuum of 5 × 10 ~ (-6) × 133.322Pa, abnormal growth took place at 950 ℃ in hydrogen and the abnormal growth occurred above 1000 ℃. Heat treatment improves the texture and magnetic properties of the alloy. Corresponding to the best texture (100) [ovw], the ribbon has the best magnetic properties (low coercivity Hc and low iron loss P). For the three materials with different amounts of silicon, the heat treatment temperature range for obtaining the best texture is also different. The temperature range of texture with (100) [ovw] of 4.5% Si-Fe is about 1050 ° C, that of 5.5% Si-Fe is 1000 ° C to 1050 ° C, and the annealing temperature is in the range of 5 × 10 -6 × 133.322 Pa for 1 h. 6.5% Si-Fe is 950-1050 ° C. In hydrogen, 6.5% Si-Fe treatment at above 1000 ℃, it is possible to get (100) [ovw] texture. The above results can be explained by the surface energy: the different surface energy of the surface, the surface energy and the surface oxide layer by the composition and thickness of the impact.