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回顾了GaN单晶体的液相生长法研究进展,主要介绍了高压氮气溶液法(HPNSG)、Na助溶剂法以及氨热法的原理、生长条件及其研究进展。液相法可以制备相比于气相法更高质量的GaN晶体。其中HPNSG可以制备位错密度低于102cm-2的GaN晶体,氨热法可以生产出高质量的2英寸(1英寸=2.54 cm)GaN晶体,重点介绍了Na助溶剂法的生长设备及最新研究成果,目前该方法已经可以生长直径超过2 cm、高度约为1.2 cm的无位错块体GaN晶体。对液相法生长GaN晶体的应用前景进行了预测,认为液相法制备的高质量GaN晶体作为大功率、高可靠性GaN电子器件理想衬底,会发挥越来越重要的作用。
In this paper, the progress of liquid phase growth of GaN single crystal is reviewed. The principle, growth conditions and research progress of high pressure nitrogen solution (HPNSG), Na flux method and ammonia heat method are introduced. The liquid phase method can produce higher quality GaN crystals than the gas phase method. Among them, HPNSG can prepare GaN crystals with dislocation density of less than 102cm-2. Ammonia can produce high-quality 2-inch (1 inch = 2.54cm) GaN crystals with emphasis on the Na-Solvent growth equipment and the latest research As a result, at present, this method has been able to grow dislocation-free bulk GaN crystals with diameter of more than 2 cm and height of about 1.2 cm. The prospects for the growth of GaN crystals by liquid-phase method are predicted. It is believed that high-quality GaN crystals prepared by liquid-phase methods will play more and more important roles as ideal substrates for high-power, high-reliability GaN electronic devices.