【摘 要】
：
We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-Vth coupling HEMT(DVC-HEMT) fabricated by connecting different threshold voltage (Vth) values including the slant recess element and planar element in parallel along the g
【机 构】
：
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidia
论文部分内容阅读
We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-Vth coupling HEMT(DVC-HEMT) fabricated by connecting different threshold voltage (Vth) values including the slant recess element and planar element in parallel along the gate width with N2O plasma treatment on the gate region.The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm) and radio frequency (RF) output signal characteristics in DVC-HEMT.The fabricated device shows the transconduc-tance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias dependence.At the operating frequency of 30 GHz,the peak power-added efficiency (PAE) of 41％ accompanied by the power density (Pout) of 5.3 W/mm.Furthermore,the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P1 dB) of 28 dBm,whereas that of the Fin-like HEMT is 25.2 dBm.The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high lineadty is essential.
其他文献
Silicon is a preferred material in solar cells,and most of silicon allotropes have an indirect band gap.Therefore,it is important to find new direct band gap silicon.In the present work,a new direct band gap silicon allotrope of o-Si32 is discovered.The e
Molecular dynamics simulations were used to investigate the influence of pressure on the structural properties and dynamics of magnesium (Mg) during rapid solidification.The dynamics analysis revealed that,with an increase in pressure,the dynamics of Mg m
Most amorphous carbon (a-C) applications require films with ultra-thin thicknesses;however,the electronic structure and opto-electronic characteristics of such films remain unclear so far.To address this issue,we developed a theoretical model based on the
Instantaneous and precise velocity sensing is a critical part of research on detonation mechanism and flow evolution.This paper presents a novel multi-projection tunable diode laser absorption spectroscopy solution,to provide a real-time and reliable meas
Two novel non-isoelectronic with diamond (non-IED) B-C-O phases (tI16-B8C6O2 and mP16-B8C5O3) have been unmasked.The research of the phonon scattering spectra and the independent elastic constants under ambient pressure(AP) and high pressure (HP) proves t
Structural stability in terms of the decomposition temperature in LiMn2O4 was systematically investigated by a series of high-temperature and high-pressure experiments.LiMn2O4 was found to have structural stability up to 5 GPa at room temperature.Under am
We analytically and numerically study a 1D tight-binding model with tunable incommensurate potentials.We utilize the self-dual relation to obtain the critical energy,namely,the mobility edge.Interestingly,we analytically demonstrate that this critical ene
The lead-free perovskites Cs3B2X9 (B =Sb,Bi;X =Cl,Br,I) as the popular photoelectric materials have excellent optical properties with lower toxicity.In this study,we systematically investigate the stable monolayer Cs3B2X9 and bilayer vertical heterostruct
Heavy elements (X =Ta/W/Re) play an important role in the performance of superalloys,which enhance the strength,anti-oxidation,creep resistance,and anti-corrosiveness of alloy materials in a high-temperature environment.In the present research,the heavy e
Divalent metal clusters have received great attention due to the interesting size-induced nonmetal-to-metal transition and fascinating properties dependent on cluster size,shape,and doping.In this work,the combination of the CALYPSO code and density funct