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研究了等离子体工艺参数对射频辉光放电沉积的a-Si:H膜中氢的键合状态的影响及氢在退火时的释放机理。结果表明:可以通过不同的制备条件(特別是等离子体压力)控制a-Si:H膜中氢的键合状态。提出了以空间氢聚团模型解释在a-Si:H膜的退火过程中氢的释放机理。
The effect of plasma process parameters on the bonding state of hydrogen in a-Si: H films deposited by radio frequency glow discharge and the release mechanism of hydrogen during annealing were investigated. The results show that the bonding state of hydrogen in the a-Si: H film can be controlled by different preparation conditions (in particular, plasma pressure). A space hydrogen polymerization model is proposed to explain the mechanism of hydrogen release during annealing of a-Si: H films.