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用金属有机化合物VPE方法成功地生长了与InAs晶格匹配的InAs_(1-x-(?))Sb_xP_(?)四元合金。在一个相当宽的组成范围内(0≤x+y≤0.7)生长的外延层显示一个镜面光亮的表面和一个陡的x-射线回摆曲线谱。在InAs上还生长了包含有100个超晶格周期的InAs-InAsSbP超晶格结构。每一个超晶格周期厚度为300(?)。已观察到异质结的界面层是很窄的,远小于60(?)。
InAs_ (1-x - (?)) Sb_xP_ (?) Quaternary alloys lattice-matched with InAs were successfully grown by the VPE method. Epitaxial layers grown over a fairly wide range of composition (0≤x + y≤0.7) show a specularly bright surface and a steep x-ray curve. An InAs-InAsSbP superlattice structure containing 100 superlattice cycles is also grown on InAs. Each superlattice cycle thickness of 300 (?). It has been observed that the interface layer of the heterojunction is very narrow, well below 60 (?).