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旧金山(MTT-S国际微波研讨会)-2006年6月13日讯-飞思卡尔半导体(NYSE:FSL,FSL.B)日前宣布推出业内第一款封装在超模压塑料封装内、性能堪与气腔封装媲美的2GHz大功率RF晶体管。这些先进的设备基于飞思卡尔的高压第七代(HV7)RF外侧扩散金属氧化物半导体(LDMOS)技术。这种先进的?
San Francisco (MTT-S International Microwave Symposium) - June 13, 2006 - Freescale Semiconductor (NYSE: FSL, FSL.B) announced the availability of the industry’s first package in an overmolded plastic package Cavity package comparable to the 2GHz high-power RF transistors. These advanced devices are based on Freescale’s High Voltage Generation 7 (HV7) RF Lateral Diffusion Metal Oxide Semiconductor (LDMOS) technology. This advanced?