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理论模拟研究了硅基绝缘(SOI)的slot波导中槽内限制功率与slot波导的结构参数以及包覆层折射率的关系。结果表明,如果包覆层的折射率偏离衬底SiO2的折射率,相同参数下的slot波导的传输损耗大于包覆层为SiO2的结构的传输损耗。分析表明,如果包层与衬底折射率不同,限制的光功率会从slot缝隙中渗透到折射率较高的衬底或者包层中,从而引起能量的损耗。理论模拟得到了在缝隙宽度为0.12μm的情况下,slot波导槽内最大的光功率限制为28.54%,这个值包含了纳米线波导与slot波导直接耦合产生的耦合损耗以及slot波导自身的传输损耗。
The theoretical simulation studies the relationship between the confinement power of the slot waveguide and the structure parameters of the slot waveguide and the refractive index of the cladding in silicon-based dielectric (SOI) slot waveguide. The results show that if the refractive index of the cladding deviates from the refractive index of the substrate SiO2, the transmission loss of the slot waveguide under the same parameters is greater than the transmission loss of the SiO2 cladding structure. The analysis shows that if the cladding and the substrate have different refractive indices, the limited optical power will penetrate into the substrate or cladding with higher refractive index from the slot gap, causing energy loss. Theoretical simulation results show that the maximum optical power in a slot waveguide slot is limited to 28.54% with a slot width of 0.12 μm. This value includes the coupling loss caused by the direct coupling between the nanowire waveguide and the slot waveguide and the transmission loss of the slot waveguide itself .