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Pure γ-Gd 2 S 3 was synthesized by the thermolysis of a single Gd[S 2 CN(C 4 H 8 )] 3 ·phen complex precursor in a flow of argon carrier gas containing sulfur vapor. The complex precursor was decomposed into amorphous Gd 2 S 3 and carbon at about 350 °C. Crystalline γ-Gd 2 S 3 could be achieved at temperature exceeding 600 °C, and the obtained γ-Gd 2 S 3 presented a very high degree of crystallinity at 800 °C. Carbon prevented the formation of Gd 2 O 2 S impurity in the preparation of γ-Gd 2 S 3 . However, the carbon blackened the product. At temperature ≥1000 °C, the residual carbon impurity could be efficiently removed by introducing sulfur into the system for the volatile CS 2 could be formed in situ via the reaction of sulfur with the deposited carbon. In the meantime, S also promoted the crystallization of γ-Gd 2 S 3 remarkablely.
Pure γ-Gd 2 S 3 was synthesized by the thermolysis of a single Gd [S 2 CN (C 4 H 8)] 3 · phen complex precursor in a flow of argon carrier gas containing sulfur vapor. The complex precursor was decomposed into amorphous Gd 2 S 3 and carbon at about 350 ° C. Crystalline γ-Gd 2 S 3 be able to achieve at temperature exceeding 600 ° C, and the obtained γ-Gd 2 S 3 presented a very high degree of crystallinity at 800 ° C. Carbon prevented the formation of Gd 2 O 2 S impurity in the preparation of γ-Gd 2 S 3. However, the carbon blackened the product. At temperature ≥1000 ° C, the residual carbon impurity could be efficiently removed by introducing sulfur into the system for the volatile CS 2 could be formed via the reaction of sulfur with the deposited carbon. In the meantime, S also promoted the crystallization of γ-Gd 2 S 3 remarkablely.