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1 引言以ＧａＮ及ＩｎＧａＮ、ＡｌＧａＮ合金材料为代表的Ⅲ族氮化物材料是近几年来国际上倍受重视的新型半导体材料。其 1 .9- 6.2ｅＶ连续可变的直接带隙 ,优异的物理、化学稳定性 ,高饱和电子漂移速度 ,高击穿场强和高热导率等优越性能使其成为短波长半导体光电子器件和高
1 Introduction GaN and InGaN, AlGaN alloy materials represented by the Group III nitride material in recent years, the international emphasis on the new semiconductor materials. Its 1.9-9.6eV continuously variable direct band gap, superior physical, chemical stability, high saturated electron drift velocity, high breakdown field strength and high thermal conductivity make it a short-wavelength semiconductor optoelectronic device and high