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The design and measurement of a snap-shot mode cryogenic readout circuit(ROIC) for GaAs/AlGaAs QWIP FPAs was reported.CTIA input circuits with pixei level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array.Design optimization techniques for cryogenic and low power are analyzed.An experimental ROIC chip of a 128×128 array was fabricated in 0.35μm CMOS technology.Measurements showed that the ROIC could operate at 77 K with low power dissipation of 35 mW.The chip has a pixel charge capacity of 2.57×10~6 electrons and transimpedance of 1.4×10~7Ω.Measurements showed that the transimpedance non-uniformity was less than 5%with a 10 MHz readout speed and a 3.3 V supply voltage.
The design and measurement of a snap-shot mode cryogenic readout circuit (ROIC) for GaAs / AlGaAs QWIP FPAs was reported. CTIA input circuits with pixei level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array. Design optimization techniques for cryogenic and low power are analyzed. An experimental ROIC chip of a 128 × 128 array was fabricated in 0.35 μm CMOS technology. Measurement showed that the ROIC could operate at 77 K with low power dissipation of 35 mW. The chip has a pixel charge capacity of 2.57 × 10 -6 electrons and transimpedance of 1.4 × 10 -7 Ω. Measurements of the transimpedance non-uniformity was less than 5% with a 10 MHz readout speed and a 3.3 V supply voltage.