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利用准分子激光原位淀积法制备了 BIT/ PZT/ BIT,PZT/ BIT和 BIT层状铁电薄膜 ,建立了一条修正的经验幂定律 I=A(ξ V) α和一个层状铁电薄膜电流密度 -电压 (I- V)曲线的近似公式 ,它包括了的非线性系数α和界面电位降特征参数 ξ。由修正的经验幂定律和 I- V曲线近似公式算出的界面电位降 Vi 与由 C- V曲线理论得出的结果一致。界面电位降与测量电容、薄膜电容及耗尽层电容有关。
BIT / PZT / BIT, PZT / BIT and BIT layered ferroelectric thin films were prepared by in situ laser deposition. A modified exponential law I = A (ξ V) α and a layered ferroelectric The approximate formula of the current density-voltage (I-V) curve includes the nonlinear coefficient α and the interface characteristic parameter ξ. The interfacial potential drop Vi calculated from the modified exponential law and the I-V curve approximation is consistent with the results from the C-V curve theory. Interface potential drop with the measured capacitance, film capacitance and depletion layer capacitance.