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用射频（ＲＦ）共溅射复合靶技术和Ｎ２ 气保护下高温退火的后处理方法，在Ｓｉ 衬底上制备出了碳化硅（ＳｉＣ） 薄膜，通过傅里叶变换红外光谱（ＦＴＩＲ） 、室温光致发光谱（ＰＬ） 、电阻率—温度关系谱、Ｘ 射线光电子谱（ＸＰＳ）等测量手段，研究了淀积膜和不同温度退火薄膜的结构、电学和光致发光等性质．与采用ＳｉＣ合金靶制备的薄膜作分析比较，结果表明，采用简单经济的复合靶共溅射方法，可以制备出性能较好的ＳｉＣ薄膜；通过调整靶中Ｓｉ，Ｃ比例并经高温退火后，有效地改善了薄膜的结构和性能．
Silicon carbide (SiC) thin films were prepared on Si substrate by RF (co-sputtering) target technique and post-treatment annealing at high temperature under N 2 gas. The films were characterized by Fourier transform infrared spectroscopy (FTIR), room temperature PL, resistivity-temperature relationship and X-ray photoelectron spectroscopy (XPS) were used to investigate the structure, electrical and photoluminescence properties of deposited films and annealed films. Compared with the films prepared by SiC alloy target, the results show that SiC thin films with good performance can be prepared by simple and economical composite target co-sputtering method. After adjusting the ratio of Si and C in the target and annealing at high temperature, Effectively improve the structure and performance of the film.