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采用气相沉积聚合法制备了聚酰亚胺(PI)薄膜及PI与金属颗粒(Cr)复合(PI/Cr)薄膜,所制备PI薄膜表面平整,随着金属颗粒体积百分数增加,PI/Cr薄膜介电常数逐渐增大;当将PI薄膜应用于压电微机械超声换能器(pMUTs)中时,pMUTs机电耦合系数显著提高,所研制pMUTs在光声成像演示中探测到了较强的光声信号;当将PI/Cr薄膜应用于AlGaN/GaN高电子迁移率场效应晶体管(HEMTs)中时,HEMTs的击穿电压由156 V提高到248 V,HEMTs器件的耐压能力显著改善。
Polyimide (PI) films and PI / Cr / PI films were prepared by vapor deposition polymerization. The surface of the PI films was smooth. With the increase of the volume percentage of the metal particles, the PI / Cr films The dielectric constant increases gradually; when the PI thin films are used in the piezoelectric micromachined ultrasonic transducers (pMUTs), the electromechanical coupling coefficient of the pMUTs is significantly increased. The developed pMUTs detect strong photoacoustic in the photoacoustic imaging demonstration Signal. When the PI / Cr films were used in AlGaN / GaN HEMTs, the breakdown voltage of HEMTs increased from 156 V to 248 V, and the breakdown voltage of HEMTs devices significantly improved.