Gas Sensor Based on lnterdigitated Gate Electrode Field Effect Transistor

• 作 者: Frank Lewis Edward S.Kolesar
• 机 构: The University of Texas at Arlington Arlington,T X 76019,USA,Texas Christian University,Fort Worth,T
• 出 处: 稀有金属材料与工程
• 发表日期: 2006年S3期
• 关键词: distinguished normalized transistor chemically fabricating chemicals excited dra

The paper presents a new method for fabricating a gas-sensitive micro-sensor based on MEMS.The primary target agents are nitrogen dioxides (NO_2),and DIMP.Past-per-billion concentration levels of these two chemicals can be detected.An interdigitated gate electrode field-effect transistor (IGEFET) has been coupled with a chemically-active and electron-beam evaporated copper phthaiocyanine (CuPc) thin film to implement a gas-sensitive micro-sensor.The sensor is excited with voltage pulse.Time and frequency-domain response were measured.The magnitude of the normalized difference Fourier transform is distinct distinguished.

The paper presents a new method for fabricating a gas-sensitive micro-sensor based on MEMS. Primary target agents are nitrogen dioxides (NO 2), and DIMP. Past-per-billion concentration levels of these two chemicals can be detected. An interdigitated gate electrode field-effect transistor (IGEFET) has been coupled with a chemically-active and electron-beam evaporated copper phthaiocyanine (CuPc) thin film to implement a gas-sensitive micro-sensor. The sensor is excited with a voltage pulse. -domain response were measured. The magnitude of the normalized difference Fourier transform is distinct distinguished.