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介绍了一款应用于3GHz通信的基于改进增益平坦度的功率放大器设计,其由商用InGaP/GaAs异质结双极性晶体管(HBT)工艺制作.为了以简单方式改善增益平坦度,除了耦合旁路电容以及射频扼流圈外,在实际电路中没有加入额外部件.其测量线性增益为23dB,大信号增益平坦度为±0.25dB,非常贴近仿真和目标值.此两级功放400MHz带宽下的输出线性功率为31dBm,增益附加效率为44%.本电路通过良好的失真补偿电路和扼流圈模型的使用,成功地改善了增益平坦度.
A power gain amplifier design based on improved gain flatness for 3GHz communication is introduced, which is fabricated by a commercial InGaP / GaAs heterojunction bipolar transistor (HBT) process.In order to improve the gain flatness in a simple manner, Circuit capacitance and RF choke, the actual circuit without adding additional components.The measurement of linear gain of 23dB, large signal gain flatness of ± 0.25dB, very close to the simulation and the target value of the two amplifier 400MHz bandwidth The output linearity is 31dBm and the additional gain is 44%. This circuit successfully improves gain flatness through the use of a good distortion compensation circuit and choke model.