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本文论述了用扫描电子显微镜研究GaP LPE半导体材料,二次电子像用于分析样品的表面形貌,电子束感生电流像(EBIC)用于显示p-n结的位置,定量EBIC用以确定少子扩散长度和表面复合速度等重要参量。
In this paper, GaP LPE semiconductor materials are studied by scanning electron microscopy. Secondary electron images are used to analyze the surface morphology of the samples. Electron beam induced current patterns (EBIC) are used to show the position of the pn junction. Quantitative EBIC is used to determine minority sub- Length and surface composite speed and other important parameters.