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本文研究了ECR－PECVD制备的Si3N4薄膜的光学特性．得到的Si3N4薄膜具有光致发光效应，在280℃沉积制备的Si3N4薄膜的光致发光波长为400nm，具有较好的单色性．测试分析了Si3N4薄膜对可见光、红外光具有较高的透射性能，Si3N4薄膜可作为红外光的增速减反射膜．
In this paper, the optical properties of Si3N4 thin films prepared by ECR-PECVD were studied. The resulting Si3N4 thin film has a photoluminescence effect. The Si3N4 thin film deposited at 280 ° C has a photoluminescence wavelength of 400 nm and has good monochromaticity. The results show that Si3N4 thin film has high transmittance to visible light and infrared light, and Si3N4 thin film can be used as an antireflection film for infrared light.