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采用含硅量较高(23wt％)的新型光致抗蚀剂实现了55nm的各种特性,获得了较高的耐腐蚀性能,并降低了线条边缘粗糙度。结果还表明,这种新型的光致抗蚀剂与浸没式光刻工艺具有良好的一致性
Using a new photoresist with a higher silicon content (23 wt%), various properties of 55 nm have been achieved, resulting in higher corrosion resistance and reduced line edge roughness. The results also show that this new type of photoresist has good consistency with immersion lithography