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在介质材料(氧化铝、熔融二氧化硅、柘榴石、兰宝石等)上蚀刻的电路图形是微波系统和毫米波系统的心脏。然而,由于器件技术的不断进展,不再需要采用这种难于控制的各向同性湿化学工艺过程。在今天几何尺寸达到亚密耳(submil)时,采用化学蚀刻法所能达到的成品率不超过30～60%。显然,需要一种代替的处理方法。计算机产生的电设计数据常常确定了所要求电路尺寸。目前的设计要求线宽为0.0015英寸,间隔为0.0005英寸。与这些尺寸有关的公差要求必须予以满足,否则该电
Circuit patterns etched on dielectric materials (alumina, fused silica, garnet, sapphire, etc.) are the heart of microwave systems and millimeter-wave systems. However, due to the advances in device technology, it is no longer necessary to employ this isotropic wet chemical process. At today’s geometrical submil sizes, yields of up to 30-60% are achievable using chemical etching. Obviously, an alternative approach is needed. Computer-generated electrical design data often determines the required circuit size. The current design requires a line width of 0.0015 inches and an interval of 0.0005 inches. The tolerance requirements associated with these dimensions must be met, otherwise the electricity