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A novel high performance Semi SJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed Semi SJCSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the Semi SJ-CSTBT exhibits an increase in breakdown voltage by 160 V(13%) and a reduction of turn-off switching loss by approximately 15%.
A novel high performance Semi SJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbor n-drift region forms a lateral P / N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching Loss of as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar , which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Thus, the proposed Semi SJCSTBT offers substantially better robustness than the conventional CSTBT and SJ-CSTBT. The simul ation results show that Semi SJ-CSTBT exhibits an increase in breakdown voltage by 160 V (13%) and a reduction of turn-off switching loss by approximately 15%.