论文部分内容阅读
一、短波红外成像及测距1.用于高灵敏度探测的做在硅上的InGaAs光电探测器(Martin Bitter等) 2.用于短波红外成像的InAlAs/InGaAs雪崩光电二极管列阵的表征(Joseph c.Boisvert等) 3.采用InGaAs焦平面列阵的距离选通成像(Robert M.Brubaker等) 4.λ_c=2.5μm的HgCdTe HDVIP探测器的可见光响应(Maryn G.Stapelbroek等) 5.用于可见光成像的InGaAs/InP焦平面列阵(Tara J.Martin等)
1. Shortwave Infrared Imaging and Ranging 1. InGaAs photodetectors for silicon (Martin Bitter et al.) For high-sensitivity detection 2. Characterization of InAlAs / InGaAs avalanche photodiode arrays for short-wave infrared imaging (Joseph c.Boisvert et al.) 3. Distance gated imaging with InGaAs focal plane arrays (Robert M. Brubaker et al.) 4. Visible light response of HgCdTe HDVIP detectors with λ_c = 2.5 μm (Maryn G. Stappelbroek et al. Visible Light Imaging InGaAs / InP Focal Plane Array (Tara J. Martin et al)