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在国际上第一次采用电子束反应蒸发法在Si(111)衬底上生长了Mg_xZn(1-x)O晶体薄膜.能量色散X射线(EDX)特征能谱及X射线衍射(XRD)分析表明薄膜呈立方结构,薄膜的晶面取向依赖于生长温度,在200℃温度下生长得到高度(200)取向的立方Mg_xZn(1-x)O薄膜,温度过高时得到多晶薄膜.对高度(200)取向的立方Mg_xZn(1-x)O薄膜的光荧光激发谱(PLE)分析表明其光学带隙为4.20eV,相对于MgO的带隙红移量为3.50eV.XRD分析还表明立方Mg_xZn(1-x)O薄膜与MgO衬底之间的晶格失配仅为0.16％.这使得高质量立方Mg_xZn(1-x)O/MgO多量子阱材料的制备成为可能.
For the first time in the world, Mg_xZn (1-x) O crystal thin films were grown on Si (111) substrates by electron beam reaction evaporation method. EDX spectra and X-ray diffraction The results show that the film has a cubic structure and the crystal orientation of the film depends on the growth temperature, and a cubic (200) oriented Mg_xZn (1-x) O thin film is grown at 200 ℃. Fluorescence excitation (PLE) analysis of (200) -oriented cubic Mg_xZn (1-x) O thin films revealed an optical bandgap of 4.20eV and a bandgap red shift relative to MgO of 3.50eV. XRD analysis also showed that cubic The lattice mismatch between the Mg_xZn (1-x) O thin film and the MgO substrate is only 0.16%, which makes the preparation of a high quality cubic Mg_xZn (1-x) O / MgO multiple quantum well material possible.