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一、前言 在硅单晶的加大过程中,往往给硅材料带来损伤或产生各种缺陷,尤其是硅单晶切割工艺,由于切割刀具的质量、进刀速度、冷却液的位置、机器的精度……等原因,都可能使硅片产生弯曲。以至经研磨、抛光过程中仍不能消除。 硅片弯曲给器件制造带来了很大困难。目前,器件生产中光刻工艺主要还是采用接触曝光。这就要求硅片表面与版的接触要好,集成度越高、线条越细。则硅片表面的平整度要求就愈高。硅片大面积和小区域内都要求有较好的平整度,不能有大范围的弯曲变形。同时,硅片表面的凹凸也将使通过扩散所形成的PN结不平,并且在器件制造工艺过程中,这种硅片容易碎裂。所以硅片弯曲影响了器件的成品率和材料利用率。
First, the preface In the process of silicon single crystal increase, often bring damage to the silicon material or produce various defects, especially silicon single crystal cutting process, due to the quality of cutting tools, feed speed, coolant position, the machine Accuracy ... ... and other reasons, may make the silicon bending. Even after grinding, polishing process can not be eliminated. Silicon wafer bending device manufacturing has brought great difficulties. At present, the lithography process in device production mainly uses contact exposure. This requires the silicon surface contact with the version is better, the higher the degree of integration, the lines thinner. The higher the surface roughness requirement of the wafer surface is. Large areas of silicon and small areas require good flatness, can not have a wide range of bending deformation. At the same time, the irregularities on the surface of the silicon wafer will also make the PN junction formed by diffusion uneven, and the silicon wafer is easily broken during the device manufacturing process. Therefore, wafer bending affects the device yield and material utilization.