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在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition,MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质,χmin达到2·00%.结合卢瑟福背散射/沟道(Rutherford backscattering/channeling,RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction,HXRD)的实验测量,研究了不同剂量和不同角度Mg+注入GaN所造成的辐射损伤.实验结果表明,随注入剂量的增大,晶体的辐射损伤也增大,注入剂量在1×1015atom/cm2以下,χmin小于4·78%,1×1016atom/cm2是Mg+注入GaN的剂量阈值,超过这个阈值,结晶品质急剧变差,χmin达到29·5%;随机注入比沟道注入的辐射损伤大,且在一定范围内随注入角度的增大,损伤也增大,在4×1015atom/cm2剂量下偏离〈0001〉沟道0°,4°,6°,9°时的χmin(%)分别为6·28,8·46,10·06,10·85;经过700℃/10min+1050℃/20s两步退火和1000℃/30s高温快速退火后,晶体的辐射损伤都有一定程度的恢复,而且1000℃/30s高温快速退火的效果更好,晶体的辐射损伤可以得到更好的恢复.
GaN films epitaxially grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates exhibit good crystalline quality with χmin up to 200% .In combination with Rutherford backscattering / channeling Rutherford backscattering / channeling, RBS / C and high-resolution X-ray diffraction (HXRD) were used to study the radiation damage induced by Mg + implantation at different doses and angles.Experimental results show that, With the increase of the dose, the radiation damage of the crystal is also increased. The implantation dose is below 1 × 10 15 atoms / cm 2 and the χ min is less than 4.78%. The 1 × 10 16 atoms / cm 2 is the dose threshold of Mg + implanted GaN beyond which the crystallization The quality was deteriorated rapidly, χmin reached 29.5%. The radiation damage induced by random injection was larger than that of channel implantation, and the damage was also increased with the increase of injection angle within a certain range. At a dose of 4 × 10 15 atom / cm 2, 0001> χ min (%) at 0 °, 4 °, 6 ° and 9 ° of the channel are respectively 6 · 28, 8 · 46, 10 · 06 and 10 · 85; after 700 ° C./10 min +1050 ° C./20s Step annealing and rapid annealing at 1000 ℃ / 30s high temperature, the crystal radiation damage has a certain degree of recovery, And 1000 ℃ / 30s better high temperature rapid anneal, radiation damage crystals may be better recovery.