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用CLS、AES和XPS研究了氧在IBA法制备的InP(111)面上的吸附及早期氧化.低暴氧量时氧已被表面In原子吸附,到10~5LO_2时可观测到铟的氧化物,而磷的氧化物则在10~5LO_2的高暴氧量下出现.初步探讨了吸附和氧化机理.
The adsorption and early oxidation of oxygen on the InP (111) surface prepared by the IBA method were studied by CLS, AES and XPS. The oxygen was adsorbed on the surface At atoms in the low oxygen exposure and the oxidation of indium was observed at 10 ~ 5LO_2 However, the phosphorus oxides appeared under the high oxygen exposure of 10 ~ 5 LO_2, and the mechanism of adsorption and oxidation was discussed.