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我们用ＰＥＣＶＤ（等离子激活化学气相沉积）方法制备ＳｎＯ２薄膜。透射电镜表明４００℃以下是非晶状态，扫描电镜测试表明颗粒度为３０ｎｍ，ＳｎＯ２薄膜的紫外可见反射吸收光谱中，沉积在石英上的ＳｎＯ２薄膜出现价带到导带本征吸收带，可计算出非晶ＳｎＯ２薄膜禁带宽为３．５４ｅＶ，ＳｎＯ２薄膜红外光谱研究表明：ＳｎＯ２非晶薄膜随着加热温度升高，有序化程度升高，在３００℃明显出现５７２ｃｍ－１的ＳｎＯ２骨架振动带。经３００℃老化样品只对醇敏感。为制备好的气敏材料提供理论基础。
We use PECVD (Plasma Activated Chemical Vapor Deposition) method to prepare SnO2 thin film. Transmission electron microscopy showed that the amorphous state was below 400 ℃, and the particle size was 30nm by scanning electron microscopy. In the UV-visible absorption spectrum of SnO2 thin film, the SnO2 thin film deposited on quartz appeared valence band to the intrinsic absorption band of conduction band, The band gap of amorphous SnO2 thin film is 3.54eV. The infrared spectrum of SnO2 thin film shows that the SnO2 thin film has an orderliness increase with the increase of heating temperature. The SnO2 skeleton vibration band of 572cm-1 obviously appears at 300 ℃. After 300 ℃ aging samples only sensitive to alcohol. For the preparation of gas-sensitive materials provide a theoretical basis.