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【摘 要】
：
3C-SiC films have been deposited on Si (111) substrates by the Iow-pressure vertical chemical vapor deposition (LPVCVD) with gas mixtures of SiH4, C3H8 and Ha.
【机 构】
：
Hefei National Laboratory for Physical Sciences at Microscale,Department of Physics
【出 处】
：
材料科学技术学报（英文版）
【发表日期】
：
2004年期
【基金项目】
：
国家自然科学基金
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