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采用三点弯曲加载方法观察细切口单晶硅试样在650℃—900℃温度区间的塑性区,其形状呈蝴蝶形,与结晶学取向密切相关。测定了由位错蚀坑所排成的最长那条滑移线长度及其与应力、温度的关系,进而计算了位错增殖和运动的阻力τ_0,结果表明,塑性区大小基木上与切口顶端应力平方成正比,而与温度、τ_0的关系较为复杂.温度和τ_0都是影响塑性区大小的敏感量.
The three-point bending loading method was used to observe the plastic zone of single-crystal Si thin-incision in the temperature range of 650 ℃ -900 ℃. The shape of the plastic zone was butterfly-shaped, which was closely related to the crystallographic orientation. The length of the slip line lined by the dislocation pits and its relationship with stress and temperature were measured. Then the resistance τ0 of dislocation propagation and movement was calculated. The results showed that the plastic zone size The top of the incision is proportional to the square of the stress, and the relationship with temperature, τ_0 is more complicated.Temperature and τ_0 are sensitive to the size of the plastic zone.