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本文考虑了瞬态的热传导过程,用有限差分方法计算了恒流、脉冲、扫描三种离子注入形成SOI结构时的温升效应。计算结果表明,当能量大于150keV和注入剂量率超过1×10~(15)/cm~2·s时,对于一般的散热系统来说(传热系数H≈2×10~(-2)W/cm~2K),温升效应将是严重的。恒流、脉冲、扫描三种注入方式比较起来,以扫描注入的温升和温度波动为最严重,恒流注入为最低。目前,在低束流情况下,大多采用热靶(400—700℃)来制造 SIMOX或SIMNI材料,本文的计算结果指出,当剂量率超过8×10~(14)/cm~2·s时,晶片温度将超过1000K(H取2×10~(-2)W/cm~2K),这时将没有必要再用热靶,用室温靶就能满足温度要求。本文给出的理论计算方法对其它材料(如金属、陶瓷等)仍可应用。
In this paper, the transient heat conduction process is considered, and the temperature rise effect of SOI structure formed by constant current, pulse and scan ion implantation is calculated by finite difference method. The calculation results show that for the general heat dissipation system (heat transfer coefficient H ≈ 2 × 10 -2 W) when the energy is greater than 150 keV and the implantation dose rate exceeds 1 × 10 15 / cm 2 · s / cm ~ 2K), the temperature effect will be serious. Compared with the three injection methods of constant current, pulse and scan, the temperature rise and temperature fluctuation of scanning injection are the most serious, and the constant current injection is the lowest. At present, most of the hot targets (400-700 ℃) are used to fabricate SIMOX or SIMNI materials under low beam current conditions. The calculation results show that when the dose rate exceeds 8 × 10-14 / cm 2 · s , The wafer temperature will exceed 1000K (H take 2 × 10 -2 W / cm ~ 2K), then there will be no need to reuse the hot target, the room temperature target will be able to meet the temperature requirements. The theoretical calculation method given in this paper can still be applied to other materials (such as metals, ceramics, etc.).