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利用单色的HeII(40.8eV)光电子谱研究了氧在GaP(111)表面上的化学吸附特征.实验表明,在室温下被吸附的氧存在两种形态:α氧和β氧。α氧在价带中的两个光电子峰分别低于价带顶6.0和10.0eV; β氧在价带顶下5.2eV处有一个主峰和在8—9eV处有一个肩峰,它对应于离解态的氧与表面原子的键合.β氧引起Ga3d能级的化学位移为0.8±0.1eV,而α氧不引起位移.在～250℃下退火,大部分的α氧脱附,并有小部分转变为β氧,后者在～550℃时脱附.所有这些结果都与氧在GaAs表面上的吸附特性类似.
The chemisorption characteristics of oxygen on the surface of GaP (111) have been studied by monochromatic HeII (40.8 eV) photoelectron spectroscopy. Experiments show that there are two forms of oxygen adsorbed at room temperature: α-oxygen and β-oxygen. The two photoelectron peaks of alpha oxygen in the valence band are 6.0 and 10.0 eV lower than the valence band, respectively; beta oxygen has a main peak at 5.2 eV at the valence band and a shoulder peak at 8-9 eV, which corresponds to dissociation Oxygen causes a chemical shift of the Ga3d energy level of 0.8 ± 0.1eV, while the α-oxygen does not cause displacement.After annealing at ~ 250 ℃, most of the α-oxygen desorption, and small Partially converted to beta oxygen, which desorbs at ~ 550 ° C. All of these results are similar to the adsorption behavior of oxygen on GaAs surfaces.