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MBE growth of ZnS_xSe_1-x thin films on ITO coated glass substrate s were carried o ut using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-gro wn polycrystalline ZnS_xSe_1-x thin films had a preferred orientat ion along the (1 11) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD laye r peaks showed strong growth temperature dependence, with the optimized temperat ure being about 290℃. Both AFM and TEM measurements of these thin films also in dicated a similar growth temperature dependence. High quality ZnS_xSe_1- x thin fil m grown at the optimized temperature had the smoothest surface with lowest RMS v alue of 1.2 nm and TEM cross-sectional micrograph showing a well defined column ar structure.
MBE growth of ZnS_xSe_1-x thin films on ITO coated glass substrates were carried o ut using ZnS and Se sources with the substrate temperature ranging from 270 ° C. to 330 ° C. The XRD θ / 2θ spectra resulted from these films indicated that the as- gro wn polycrystalline ZnS_xSe_1-x thin films had a preferred orientat ion along the (1 11) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD laye r peaks showed strong growth temperature dependence, with the optimized temperate ure 290 Both AFM and TEM measurements of these thin films also in dicated a similar growth temperature dependence. High quality ZnS_xSe_1-x thin fil m grown at the optimized temperature had the smoothest surface with lowest RMS vlue of 1.2 nm and TEM cross-sectional micrograph showing a well defined column ar structure.