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制备了采用半背沟注入的浮体和体接触部分耗尽SOInMOSFETs.测试结果表明这样的器件相对于传统的部分耗尽SOInMOSFETs来说,在提高击穿电压和延缓翘曲现象发生方面有良好的表现,并且背栅阈值电压没有太大的变化.数值模拟表明降低的电场有助于击穿特性的提高和翘曲现象的延缓.详细分析了提高击穿特性和延缓翘曲效应的原因.
A floating bulk and bulk contact partially depleted SOInMOSFETs fabricated using a half-ditch ditch were prepared.The test results show that such devices exhibit good performance in increasing breakdown voltage and delaying warpage relative to conventional partially depleted SOInMOSFETs , And the back gate threshold voltage is not much changed.The numerical simulation shows that the decreased electric field is conducive to improve the breakdown characteristics and the warpage delay.The reason of improving the breakdown characteristics and the delay warpage effect is analyzed in detail.