A novel modified charge pumping method for trapped charge characterization in nanometer-scale device

• 作 者: 祝鹏 潘立阳 古海明 谯凤英 邓宁 许军
• 机 构: Institute of Microelectronics,Tsinghua University,Tsinghua National Laboratory for Information Scien
• 出 处: 半导体学报
• 发表日期: 2010年10期
• 关键词: pumping nanometer trapped utilized consistency narrow precisely nitride charges

A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET.A 0.12μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method.The trapped charge distribution with a narrow peak can be precisely characterized with this method,which shows good consistency with the measured threshold voltage.

A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.