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采用分离靶电弧离子镀制备TiN/TiAlN多层薄膜。为了减少大颗粒的不利影响,利用直线型磁过滤方法来减少低熔点铝靶产生的大颗粒。结果表明,没有过滤的钛靶和磁过滤的铝靶等离子体到达基体的输出量在相同的数量级,同时,采用该方法制备的薄膜中的大颗粒数目是文献中报道的合金靶制备的薄膜大颗粒数目的1/10～1/3。Al元素的添加引起薄膜在(200)晶面的峰值降低,而在(111)和(220)晶面的峰值增强。TiN/TiAlN多层薄膜的最大硬度为HV2495,薄膜的硬度增强符合混合法则,结合力达75 N。
TiN / TiAlN multilayer films were prepared by separate target arc ion plating. In order to reduce the adverse effects of large particles, linear magnetic filtration is used to reduce the large particles produced by the low melting point aluminum target. The results show that the output of unfiltered titanium target and magnetic filtered aluminum target plasma reaches the same order of magnitude while the number of large particles in the film prepared by this method is large The number of particles is 1/10 to 1/3. The addition of Al element causes the decrease of the film peak at the (200) plane and the peak at the (111) and (220) planes. The maximum hardness of TiN / TiAlN multi-layer film HV2495, film hardness enhancement in line with the law of mixing, the binding power of 75 N.