Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chem

• 作 者: 杨贺 申承民 田园 王高强 林少雄 张一 顾长志 李俊杰 高鸿钧
• 机 构: Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sci
• 出 处: Chinese Physics B
• 发表日期: 2014年09期
• 关键词: minutes controllable tunneling tuning monolayer defects nucleation purchased coa

Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2–3 sccm CH4 for 30 minutes.

Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH4 for 30 minutes.