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报道了用新的正向栅控二极管技术分离热载流子应力诱生的 SOI- MOSFET界面陷阱和界面电荷的理论和实验研究 .理论分析表明 :由于正向栅控二极管界面态 R- G电流峰的特征 ,该峰的幅度正比于热载流子应力诱生的界面陷阱的大小 ,而该峰的位置的移动正比于热载流子应力诱生的界面电荷密度 .实验结果表明 :前沟道的热载流子应力在前栅界面不仅诱生相当数量的界面陷阱 ,同样产生出很大的界面电荷 .对于逐渐上升的累积应力时间 ,抽取出来的诱生界面陷阱和界面电荷密度呈相近似的幂指数方式增加 ,指数分别为为 0 .7和 0 .85 .
The theoretical and experimental studies on SOI-MOSFET interface traps and interfacial charges induced by hot carrier stress induced by new forward-gate diode technology are reported.The theoretical analysis shows that due to the positive G-mode R-G current The peak amplitude is proportional to the size of the interface trap induced by hot carrier stress and the shift of the peak position is proportional to the charge density induced by hot carrier stress.The experimental results show that the front channel Road hot carrier stress in the front gate interface not only induced a considerable number of interface traps, also produced a large interface charge.For the cumulative cumulative stress time, the induced interface trap and interfacial charge density was phase The approximate power of exponential increases, with indices of 0.7 and 0.85 respectively.