Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

• 作 者: 田晓丽 陆江 滕渊 张文亮 卢烁今 朱阳军
• 机 构: Institute of Microelectronics, Chinese Academy of Sciences,Shanghai Lianxing Electronics Co., Ltd,
• 出 处: Journal of Semiconductors
• 发表日期: 2015年03期
• 关键词: breakdown implant bipolar deterioration transistor decreasing waveform suppressi

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.

The static avalanche breakdown behavior of 4.5 kV IGBTs studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the NC buffer layer, the other is decreasing the implant dose of the PC collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.