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The rare earth element Gd is doped into N Si substrate using thermal diffusion process. The rectifying contact with junction function is formed and reverse breakdown voltage is higher partly than 160v. The photocurrent can be observed in part of PN junction .
The rare earth element Gd is doped into an Nsi substrate using a thermal diffusion process. The rectifying contact with junction function is formed and reverse breakdown voltage is higher than 160v. The photocurrent can be observed in part of PN junction.