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建立了衬底电流模型中特征长度参数的改进描述 ,该参数的引入使衬底电流模型能够有效地适用于从微米尺寸到亚微米、深亚微米尺寸的 L DD MOSFET.在以双曲正切函数描述的 I- V特性基础上 ,该解析模型的运算量远低于基于数值分析的物理模型 ,其中提取参数的运用也大大提高了模型的精度 ,模拟结果与实验数据有很好的一致性 .
An improved description of the characteristic length parameter in the substrate current model is established. The introduction of this parameter enables the substrate current model to be effectively applied to the sub-micron and deep submicron L DD MOSFETs from the micron size. In the hyperbolic tangent function Based on the described I-V characteristics, the computational complexity of the analytical model is much lower than that of the physical model based on numerical analysis. The use of extraction parameters also greatly improves the accuracy of the model. The simulation results are in good agreement with the experimental data.