Long-Period InAs/GaSb Type-II Superlattices for Terahertz Application

• 作 者: Longlong Li Jun Ni Wen Xu
• 机 构: DepartmentofPhysicsandStateKeyLaboratoryofLow-DimensionalQuantumPhysics,KeyLaboratoryofMaterialsPhys
• 出 处: 现代物理(英文)
• 发表日期: 2014年17期
• 关键词: Long-Period INAS/GASB TYPE-II SLs THZ OPTOELECTRONIC Properties THZ Band-Gap and

We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of such SLs and on the basis of band struct