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图1是用二极管耦合的单元在单片上达到高等数时间和高速的单元电路。用一个低势垒的肖特基二极管将唯读存储器潜象加在普通的存储单元上。此二极管加在晶体管的左边代表“1”,或加在右边的晶体管上代表“○”,在图2左边中,由p~+隔离槽到一个集电极上加一个肖特基二极管,将唯读存储器潜象加在存储单元上。当加电压时,p~+隔离区是负偏置态(见图1)。附加的肖特基势垒不影响随机存取存储器的工作能力。在需要唯读存储器显象时,
Figure 1 is a diode coupled unit to achieve a high number of single-chip high-speed unit time and circuit. A low-barrier Schottky diode adds a read-only memory image to a normal memory cell. This diode is added to the left of the transistor to represent “1” or to the right of the transistor to represent “○”. On the left in Figure 2, a Schottky diode is added to a collector by the p ~ + isolation trench, The read memory potential is added to the memory cell. When voltage is applied, p ~ + isolation region is negative bias state (see Figure 1). The additional Schottky barrier does not affect the RAM’s ability to operate. When a read-only memory display is needed,