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本文讨论了红外探测器/电荷耦合器件集成结构的效果。采用了硅MOS/CCD工艺制备的CCD,它有8、16和32个探测器,是在硅衬底上掺镓(N_(Ga)=6×10~(16)/厘米~3)制得。在红外背景产生的电流在0.15～50微微安范围内,鉴定了器件的性能。测出的信噪比接近10~4,表明动态范围至少能达80分贝。背景抑制和过载保护电路已作在CCD上。在几种背景条件和钟频10千赫～100千赫进行了信号带宽测量。探测器的工作温度上限约20K。在低达8K时,未观察到反常的电荷转移效应。还讨论了探测器串扰。
This article discusses the effect of an IR detector / charge-coupled device integrated structure. The CCD prepared by the silicon MOS / CCD process has 8, 16 and 32 detectors, and is prepared by gallium-doped (Ga) = 6 × 10-16 / cm3 on a silicon substrate . The current generated on the infrared background is in the range of 0.15 to 50 picoamperes, and the performance of the device is identified. The measured signal to noise ratio is close to 10 ~ 4, indicating that the dynamic range of at least up to 80 dB. Background suppression and overload protection circuits have been made on the CCD. Signal bandwidth measurements were carried out in several background conditions and clock frequencies from 10 kHz to 100 kHz. The maximum working temperature of the detector is about 20K. At as low as 8K, no abnormal charge transfer effects were observed. Probe crosstalk is also discussed.