Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array de

• 作 者: 田超 郭树旭 梁静秋 梁中翥 郜峰利
• 机 构: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, J
• 出 处: Optoelectronics Letters
• 发表日期: 2017年04期
• 关键词: dissipation simplified verified conduct reaches dimensions pixel arrangement ins

This paper describes a novel finite element thermal analysis model for an AlGaInP-LED micro-array device. We also conduct a transient analysis for the internal temperature field distribution of a 5×5 array device when a 3×3 unit is driven by pulse current. In addition, for broader applications, a simplified thermal analysis model is introduced and its accuracy is verified. The internal temperature field distribution of 100×100 units is calculated using the simplified model. The temperature at the device center reaches 360.6 °C after 1.5 s. In order to solve the heat dissipation problem of the device, an optimized heat dissipation structure is designed, and the effects of the number and size of the heat dissipation fins on the thermal characteristics of the device are analyzed.

This paper describes a novel finite element thermal analysis model for an AlGaInP-LED micro-array device. We also conduct a transient analysis for the internal temperature field distribution of a 5 × 5 array device when a 3 × 3 unit is driven by pulse current . In addition, for broader applications, a simplified thermal analysis model is introduced and its accuracy is verified. The internal temperature field distribution of 100 × 100 units is calculated using the simplified model. The temperature at the device center reaches 360.6 ° C after 1.5 s. In order to solve the heat dissipation problem of the device, an optimized heat dissipation structure is designed, and the effects of the number and size of the heat dissipation fins on the thermal characteristics of the device are analyzed.