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Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.
Microstructure of P + Si 0.65 Ge 0.35 / p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is a defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm The crystal defects are stacking faults and microtwins.