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This paper proposed a discrete operation mode for a punchthrough(PT) phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation results show that with the new operation mode,the photocurrent is much larger than that of continuous operation mode.An ultra-high responsivity of 2×10~7A/W at 10~(-9) W/cm~2 is obtained with a small detector size of 1μm~2.In CMOS image sensor applications,with an integration time of 10 ms,a normalized pixel responsivity of 220 V·m~2/W·s·μm~2 is obtained without any auxiliary amplifier.
This paper proposed a discrete operation mode for a punchthrough (PT) phototransistor, which is suitable for low power application, since the bias current is only necessary during the read-out phase. Mango, simulation results show that with the new operation mode, the The photocurrent is much larger than that of continuous operation mode. An ultra-high responsivity of 2 × 10 ~ 7A / W at 10 ~ (-9) W / cm ~ 2 is obtained with a small detector size of 1μm ~ 2.In CMOS With the integration time of 10 ms, a normalized pixel responsivity of 220 V · m ~ 2 / W · s · μm ~ 2 is obtained without any auxiliary amplifier.