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借助电子背散射(EBSD)技术对AlN为主抑制剂的Hi-B取向硅钢常化工艺的中间冷却制度进行了研究。结果表明:常化后试样均发生了完全再结晶,在60℃/s冷速下组织最均匀;在合适的冷却制度下常化板表层保留了强的Goss织构,它深入到1/4厚度处,并且形成对Goss织构有利的强{554}<225>织构。
The intermediate cooling system of the normalization process of Hi-B oriented silicon steel with AlN as the main inhibitor was studied by electronic backscatter (EBSD) technique. The results show that the recrystallized samples are completely recrystallized and the microstructure is the most uniform at the cooling rate of 60 ℃ / s. The strong Goss texture is retained on the surface of the normalized slab under proper cooling system, 4 thickness and form a strong {554} <225> texture that favors Goss texture.