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采用电子束沉积技术生长W掺ZnO(WZO,ZnO:W)透明导电氧化物(TCO)薄膜(即WZO-TCO薄膜)并研究了衬底温度(100～350℃)对薄膜微观结构、表面形貌以及光电性能的影响。实验表明,随着衬底温度的升高,薄膜的晶体质量取得明显改善(从非晶化状态转变到结晶状态),生长的WZO薄膜呈现c轴择优取向[即(002)晶面]的六角纤锌矿结构。提高衬底温度后,薄膜的光电性能得到了显著改善。霍尔(Hall)迁移率随着衬底温度增加而单调升高,从100℃时的0.1cm2.V-1.s-1提高到350℃时的15.4cm2.V-1.s-1。在衬底温度200℃时获得WZO薄膜最低电阻率2.6×10-3Ω.cm。实验结果还表明,在350℃条件下获得的WZO薄膜性能相对较好,其典型Hall迁移率为15.4cm2.V-1.s-1,载流子浓度为1.2×1020 cm-3,可见光和近红外区域内的平均透过率为82.27%(含2mm玻璃衬底)。
The W-doped ZnO (WZO, ZnO: W) transparent conductive oxide (TCO) thin films (ie, WZO-TCO thin films) were grown by electron beam deposition and the effects of substrate temperature (100-350 ℃) Appearance and the influence of photoelectric performance. The experimental results show that with the increase of the substrate temperature, the crystal quality of the films is improved obviously (from the amorphous state to the crystalline state), and the WZO thin films exhibit hexagonal c-axis preferred orientation [ie (002) crystal plane] Wurtzite structure. After the substrate temperature is raised, the photoelectric properties of the films are significantly improved. Hall mobility monotonically increases with increasing substrate temperature from 0.1cm2.V-1.s-1 at 100 ℃ to 15.4cm2.V-1.s-1 at 350 ℃. The lowest resistivity of WZO film was 2.6 × 10-3Ω.cm at substrate temperature of 200 ℃. The experimental results also show that the WZO thin film obtained at 350 ℃ has a relatively good performance with a typical Hall mobility of 15.4cm2.V-1.s-1, a carrier concentration of 1.2 × 1020cm-3, visible light and The average transmittance in the near infrared region was 82.27% (including 2 mm glass substrate).