论文部分内容阅读
采用热丝CVD法在硅衬底上合成了金刚石薄膜，研究了工艺参数对金刚石形核与长大的影响规律。形核密度随甲烷深度的增加和抛光膏粒度的减小而增加，随衬底温度上升而增加至极值后下降，衬底温度过低，形核密度增加但形核为球状。金刚石的生长分为初始阶段，均速生长阶段和稳定生长阶段。生长速率与衬底表面氢原子浓度有关，由键合速度和扩散速度共同决定。
A diamond thin film was synthesized on a silicon substrate by hot filament CVD method. The influence of process parameters on the nucleation and growth of diamond was studied. The nucleation density increases with the increase of methane depth and the particle size of polishing paste, increases with the increase of substrate temperature and then decreases, the substrate temperature is too low, the nucleation density increases but the nucleation is spherical. Diamond growth is divided into the initial stage, the average growth stage and stable growth stage. The growth rate is related to the concentration of hydrogen atoms on the substrate surface and is determined by the bonding rate and diffusion rate.